Optoelectronic Materials and Devices

Invited Speakers:

  • Namjung Kim, Korea Military Academy, South Korea
    Graphene as a robust, flexible support for optoelectronic devices
  • Shigeru Mieda, Tohoku University, Japan
    Ultra-high-speed semiconductor light source for next-generation optical communication system
  • Kazushi Miki, National Institute for Materials Science (NIMS), Japan
    A visible light-driven plasmonic catalysys
  • Tetsuya Mizumoto, Tokyo Institute of Technology, Japan
    Photonic devices fabricated by direct bonding of magneto-optical garnet
  • Takahiro Numai, Ritsumeikan University, Japan
    Resonance-Shifted DFB-LD for High E/O Conversion Efficiency and Stable Single Longitudinal Mode Operation
  • Pierre Ruterana, CIMAP UMR 6252, France
    The structure of InGaN/GaN heterostructure for emission In the visible
  • DeGui Sun, University of Ottawa, Canada
    A Strategy to Remove the Critic Obstacles from the Road to the Large-Scale Optical Integrated Devices on Silica-PLC Platform: Realization of Low-Loss Signal Sharp-Turning
  • Yuen Hong Tsang, The Hong Kong Polytechnic University, Hong Kong
    Novel materials based saturable absorber used for mode locking ultrafast laser pulses generation

Workshop Chair:

Operating Organization

OAHOST
Sponsors
UESTC
IFFS

1

INRS

Springer
Program:

April 21: On-Site Registration
April 22 - 24: Scientific Program
April 25: One-Day Excursion
Important Dates:

Abstract deadline:
February 25, 2016

Registration for early birds:
Before March 1, 2016

Contact Us:
beijing@emnmeeting.org emnbeijing@outlook.com