Semiconductor Devices

  • Mohamed Alsharef, Ilmenau University of Technology, Germany
    GaN HEMT Tri-gate: Design and Investigations
  • Kei Hayashi, Tohoku University, Japan
    Effects of interstitial Mg and secondary phases on thermoelectric properties of Mg2Si
  • Olivier Latry, Université de Rouen, France
    Physical Schottky parameters extraction using the Lambert function in AlGaN/GaN HEMT devices with defined conduction phenomena
  • Pey Kin Leong, Singapore University of Technology and Design, Singapore
    Real time observation of switching mechanisms in MIS devices by TEM/EELS
  • Jiangwei Liu, National Institute for Materials Science (NIMS), Japan
    Semiconductor diamond metal-insulator-semiconductor field-effect transistors
Operating Organization

OAHOST
Sponsors
UESTC
IFFS

1

INRS

Springer
Program:

April 21: On-Site Registration
April 22 - 24: Scientific Program
April 25: One-Day Excursion
Important Dates:

Abstract deadline:
February 25, 2016

Registration for early birds:
Before March 1, 2016

Contact Us:
beijing@emnmeeting.org emnbeijing@outlook.com