Light-emitting diode (LED)

Invited Speakers:

  • Bayarto Lubsandorzhiev, Institute for Nuclear Research, RAS, Russia
    Light emission kinetics of GaN/InGaN light emitting diodes
  • Byeong-Soo Bae, KAIST, Korea
    Thermally Resistant Siloxane Hybrid Materials for LED Encapsulants
  • Dongge Ma, Changchun Institute of Applied Chemistry, CAS, China
  • Erdan Gu, University of Strathclyde,UK
    Novel applications of LEDs
  • Farn-Shiun Hwu, Taoyuan Innovation Institute of Technology, Taiwan
    Experimental and numerical analysis of electrode patterns on the GaN-based LEDs
  • Giovanni Verzellesi, Università di Modena e Reggio Emilia, Italy
    Efficiency droop in Gallium Nitride based light-emitting diodes: physical mechanisms and technological remedies
  • Rong-Jun Xie, National Institute for Materials Science, Japan
    Highly thermal stable and efficient nitride phosphors for white LEDs
  • Sivakumar Vaidyanathan, National Institute of Technology, India
    Lanthanide based phosphor or molecular complexes for LEDs
  • Zhe Chuan Feng, Guangxi University, China
    Time-resolved and temperature dependent photoluminescence investigation of III-Nitride based green LEDs grown on Si-substrate by MOCVD
  • Zihui Zhang, Nanyang Technological University, Singapore
    A hole accelerator for energizing holes and facilitating the injection for InGaN/GaN light-emitting diodes
Operating Organization

University of Electronic Science and Technology of China

Conference assistant:Vantasy Wang