Wide-Bandgap Materials and Devices

Invited Speakers:

  • Yasuhiko Arakawa, University of Tokyo, Japan
    Nitride-based Quantum Dot for Single Photon Emitter Operating at Room temperature
  • Dnyaneshwar Shaligram Patil, North Maharashtra University, India
    Analysis of Zinc Oxide Nano Structures for Light Emitting Devices
  • Matthieu Roussey, University of Eastern Finland, Finland
    Atomic Layer Deposited Titanium Dioxide for Integrated Optics Devices
  • Atsushi A. Yamaguchi, Kanazawa Institute of Technology, Japan
    Optical Properties of Low-Dislocation-Density GaN Films Fabricated by Nano-channel Facet-Initiated Epitaxial Lateral Overgrowth
  • Hongyu Yu, South University of Science and Technology of China, China
    GaN HEMTs Fabricated by CMOS Compatible Process

 

 

 

 

 

Workshop Chair:

Operating Organization

OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China
UARK

Springer