Defects in Electronic and Photonic Materials

Invited Speakers:

  • Gang┬áLiu, Ningbo Institute of Materials Technology and Engineering, CAS, China
    Ion tranport related resistive switching and information storage applications
  • Lin Chen, School of Microelectronics, Fudan University, China
    Oxide based resistive switching memory and it’s physical mechanism
  • Taku Suzuki, National Institute for Materials Science, Japan
    Modification of ZnO surfaces by W segregation and their gas sensing properties
  • Tokiyoshi Matsuda, Ryukoku University, Janpan
    Comparison of paramagnetic defects in Oxide semiconductors evaluated by ESR
  • Tomasz Krajewski, Polish Academy of Sciences, Poland
    The influence of defect states on electrical properties of rectifying junctions based on ZnO

 

 

 

Workshop Chairs:

Operating Organization

OAHOST
Sponsors
UESTC
University of Electronic Science and Technology of China

 qingdao

UARK

Springer