Quantum Computation with Nanostructures and Dopants

Invited Speakers:

  • Daniel MORARU,┬áDepartment of Electronics and Materials Science, Graduate School of Engineering, Shizuoka University, Japan
    Quantum-Tunneling in Dopant-Atom Transistors up to Room Temperature
  • G. Narahari SASTRY,┬áMolecular Modeling Group, Indian Institute of Chemical Technology, India
    Fine tuning the properties of carbaneous structures in a non-covalent fashion
  • Hoon RYU, Korea Institute of Science and Technology Information, Korea
    Simulations of Optical Properties of Realistically Sized Dopant Structures: With High Performance Computing and Intel® Xeon Phi Coprocessors
  • Khalid OMAR, Material Science and Metallurgy, University of Nizwa, Oman
    Developing on porous solar cell
  • Takahiro SHIMADA, Department of Mechanical Engineering and Science, Kyoto University, Japan
    Defect Engineering for Low-dimensional Atomic Multiferroics
  • Tetsuo KODERA, Department of Physical Electronics, Tokyo Institute of Technology, Japan
    Spin-based quantum information devices using physically-defined silicon quantum dots
  • Thaneshwor KALONI, Department of Chemistry, University of Manitoba, Winnipeg, Canada
    Current development in silicene and germanene: two-dimensional systems beyond graphene



Workshop Chair:

Operating Organization